The HS516R Omnipolar Hall effect sensor IC is fabricated from mixed signal CMOS technology. It incorporates advanced chopper-stabilization techniques to provide accurate and stable magnetic switch points. The circuit design provides an internally co*olled clocking mechanism to cycle power to the Hall element and analog signal processing circuits.This serves to place the high current-cons uming portions of the circuit into a “Sleep” mode. Periodically the device is “Awakened” by this internal logic and the magnetic flux from the Hall element is evaluated against the predefined thresholds. If the flux density is above or below the B OP/BRP thresholds then the output transistor is driven to change states accordingly. While in the “Sleep” cycle the output transistor is latched in its previous state. The design has been optimized for service in applications requiring extended operating lifetime in battery powered systems. The output transistor of the HS516R will be latched on (BOP) in the presence of a sufficiently strong South or North magnetic field facing the marked side of the package. The output will be latched off (BRP) in the absence of amagnetic field.It incorporates advanced chopper-stabilization techniques to provide accurate and stable magnetic switch points. 深圳市七悦科技有限公司,长期提供全**霍尔开关,单**霍尔开关,双**锁存霍尔开关,微功耗霍尔开关,磁性传感器,霍尔元件(4条腿),锑化铟Insb,霍尔传感器,线性霍尔,电机霍尔,测速霍尔,霍尔IC,磁控开关。